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savantic semiconductor product specification silicon npn power transistors 2SC2774 d escription with mt-200 package high power dissipation high current capability applications for audio power amplifier and general purpose applications pinning(see fig.2) pin description 1 base 2 collector;connected to mounting base 3 emitter absolute maximum ratings(ta=25 ) symbol parameter conditions value unit v cbo collector-base voltage open emitter 200 v v ceo collector-emitter voltage open base 200 v v ebo emitter-base voltage open collector 6 v i c collector current 17 a i b base current 5 a p c collector power dissipation t c =25 200 w t j junction temperature 150 t stg storage temperature -55~150 fig.1 simplified outline (mt-200) and symbol downloaded from: http:///
savantic semiconductor product specification 2 silicon npn power transistors 2SC2774 characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c =25ma ; i b =0 200 v v (br)ebo emitter-base breakdown voltage i e =1ma ; i c =0 6 v v cesat collector-emitter saturation voltage i c =5a; i b =0.5a 2.0 v i cbo collector cut-off current v cb =200v; i e =0 100 a i ebo emitter cut-off current v eb =5v; i c =0 100 a h fe dc current gain i c =5a ; v ce =4v 50 140 c ob output capacitance i e =0 ; v cb =10v;f=1mhz 300 pf f t transition frequency i c =2a ; v ce =12v 20 mhz h fe classifications o y 50-100 70-140 downloaded from: http:///
savantic semiconductor product specification 3 silicon npn power transistors 2SC2774 package outline fig.2 outline dimensions downloaded from: http:///

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